It proves for being prolonged-expression steady and does not drift over and above the datasheet limitations. Infineon guarantees device parameters - RDS(on) and VSD - continue to be within datasheet limitation to the operation life span by adhering to: CoolSiC�?is synonymous with revolutionary in trench SiC MOSFET technology. Infineon Again https://www.facebook.com/permalink.php?story_fbid=pfbid0ygWVm68Mh1ZJQ1dLdxpDjBuMP8Yyvfakp73QgWKGfcpV7RVJ9yeSp68mh2LhYrbrl&id=61562415773754&__cft__[0]=AZUPDIKb0yqG5-dT2CE3hT9KjX-oLkSfiXcz28Bs6kopRBOKX097z_9LiFCCyc98YbUzBrs8DLiYdVUrsXfIrLYE08-_9tbhkUUEm6DngblrB_OQgG2KcDXJ03sxi7f0wauDzjtTUtxW61VNZpoUG4EfLiEukM4u7U4FTqdY0Z5MwE0kTyhZtoiHpzo6wmO2IdtGWubaVGEdco8aEwtSLsLK&__tn__=%2CO%2CP-R